SAMSUNG

Features Interface: Serial ATA Component for: Server/workstation Harmonized System (HS) code: 84717070 Memory type: TLC SSD capacity: 960 GB Write speed: 520 MB/s DWPD: 1 SSD form factor: 2.5" Package type: OEM Product series: PM893 Read speed: 550 M

Vrhunska zmogljivost 870 EVO dosega največje hitrosti, ki jih premore SATA vmesnik - hitrost branja je 560 MB/s, zapisovanja pa 530 MB/s. Tehnologija TurboWrite pospe&scaron,uje hitrost zapisovanja in dolgoročno ohranja visoko zmogljivost. Prepros

SSD 8TB + HS, MTBF 1.500.000,0000, Sučelje M.2 PCIe 5.0 x4, m.2 2280 ,TLCNAND, V-NAND, Brzina čitanja do 14.800,0000 Mb/s, Brzina za pisivanjado13.400 ,0000 Mb/s, Software Samsung Magician software

Box Weight Brutto (kg): 0.05 kg , EAN Code: 0 , Pack Height (mm): 3 mm , Pack Length (mm): 133 mm , Pack Weight Brutto (kg): 0.05 kg , Pack Width (mm): 31 mm , Pieces in pack: 1 , Warranty Term (month): 36 month(s)

Lastnosti- Izjemna zanesljivost 24/7- Odlična zmogljivost, nizke zakasnitve- Ena najboljših rešitev za težke obremenitve- 1 DWPD (Drive Writes Per Day)- AES-XTS 256-bit šifriranje s tehnologijo ,TCG Opal 2.0 Samsung PM893 nudi odlične hitrosti,

PCIe 5.0 HITROSTIPohitrite svoje delo in igre s PCIe 5.0 hitrostmi branja in pisanja. Velike datoteke se prenesejo, kopirajo in premikajo kar 2x hitreje kot na Samsung 990 Pro.SPOZNAJTE HITROSTSamsung 9100 Pro dosega hitrosti naključnega branja do 2.

PCIe 5.0 HITROSTIPohitrite svoje delo in igre s PCIe 5.0 hitrostmi branja in pisanja. Velike datoteke se prenesejo, kopirajo in premikajo kar 2x hitreje kot na Samsung 990 Pro.SPOZNAJTE HITROSTSamsung 9100 Pro dosega hitrosti naključnega branja do 2.

Internal memory A computer's memory which is directly accessible to the CPU. 32 GB Memory layout (modules x size) How the overall memory of the product is put together, defined by the number of modules and the size. 1 x 32 GB Internal memory type Th

Features Component for: Server/workstation Random read (4KB): 420000 IOPS Write speed: 2000 MB/s SSD capacity: 7.68 TB Read speed: 2100 MB/s Memory type: V-NAND Random write (4KB): 110000 IOPS Mean time between failures (MTBF): 2000000 h NVMe: No Pro